NGB8206ANT4G datasheet(6/9 Pages) ONSEMI

Part #	NGB8206ANT4G

Description	Ignition IGBT

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NGB8206N, NGB8206AN

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TYPICAL ELECTRICAL CHARACTERISTICS

TJ, JUNCTION TEMPERATURE (°C)

−50

75

100

25

0

125

−25

175

Mean + 4 s

Mean − 4 s

Mean

VGE, GATE TO EMITTER VOLTAGE (V)

1.50

0.25

0

2.50

0.75

1.25

2.00

100000

1000

100

10

0.1

6

4

0

8

10

12

Figure 7. Transfer Characteristics

Figure 8. Collector−to−Emitter Leakage

Current vs. Temperature

Figure 9. Gate Threshold Voltage vs.

Temperature

Figure 10. Capacitance vs.

Collector−to−Emitter Voltage

Figure 11. Resistive Switching Fall Time vs.

Temperature

TJ, JUNCTION TEMPERATURE (°C)

Figure 12. Inductive Switching Fall Time vs.

Temperature

TJ, JUNCTION TEMPERATURE (°C)

050

25

−25

125

175

TJ = 175°C

75

100

150

50

75

25

100

175

150

VCE = 175 V

1.5

3

3.5

2.5

4

2

0.5

20

10

40

0

30

0

VCE = 5 V

1.0

50

150

0.50

1.00

1.75

2.25

2

125

10000

1000

100

10

0.1

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

015

525

10

20

Crss

Ciss

Coss

1.0

6

4

0

8

10

12

TJ, JUNCTION TEMPERATURE (°C)

75

50

100

175

150

2

25

125

25

15

45

5

35

1

TJ = −40°C

TJ = 25°C

−50

VCE = −24 V

tfall

tdelay

VCC = 300 V

VGE = 5.0 V

RG = 1000 W

IC = 9.0 A

RL = 33 W

tfall

VCC = 300 V

VGE = 5.0 V

RG = 1000 W

IC = 9.0 A

L = 300 mH

tdelay

10000

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