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FDP047AN08A0 Datasheet(PDF) 7 Page - Fairchild Semiconductor |
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FDP047AN08A0 Datasheet(HTML) 7 Page - Fairchild Semiconductor |
7 / 10 page ©2002 Fairchild Semiconductor Corporation FDP047AN08A0 Rev. A PSPICE Electrical Model .SUBCKT FDP047AN08A0 2 1 3 ; rev March 2002 CA 12 8 1.5e-9 CB 15 14 1.5e-9 CIN 6 8 6.4e-9 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 82.3 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTHRES 6 21 19 8 1 EVTEMP 20 6 18 22 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 4.81e-9 LSOURCE 3 7 4.63e-9 MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 9e-4 RGATE 9 20 1.36 RLDRAIN 2 5 10 RLGATE 1 9 48.1 RLSOURCE 3 7 46.3 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 2.3e-3 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTEMPMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*250),10))} .MODEL DBODYMOD D (IS = 2.4e-11 N = 1.04 RS = 1.76e-3 TRS1 = 2.7e-3 TRS2 = 2e-7 XTI=3.9 CJO = 4.35e-9 TT = 1e-8 M = 5.4e-1) .MODEL DBREAKMOD D (RS = 1.5e-1 TRS1 = 1e-3 TRS2 = -8.9e-6) .MODEL DPLCAPMOD D (CJO = 1.35e-9 IS = 1e-30 N = 10 M = 0.53) .MODEL MMEDMOD NMOS (VTO = 3.7 KP = 9 IS =1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1.36) .MODEL MSTROMOD NMOS (VTO = 4.4 KP = 250 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL MWEAKMOD NMOS (VTO = 3.05 KP = 0.03 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1.36e1 RS = 0.1) .MODEL RBREAKMOD RES (TC1 = 1.05e-3 TC2 = -9e-7) .MODEL RDRAINMOD RES (TC1 = 1.9e-2 TC2 = 4e-5) .MODEL RSLCMOD RES (TC1 = 1.3e-3 TC2 = 1e-5) .MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6) .MODEL RVTHRESMOD RES (TC1 = -6e-3 TC2 = -1.9e-5) .MODEL RVTEMPMOD RES (TC1 = -2.4e-3 TC2 = 1e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.0 VOFF= -1.5) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.5 VOFF= -4.0) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.0 VOFF= 0.5) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= -1.0) .ENDS Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. 18 22 + - 6 8 + - 5 51 19 8 + - 17 18 6 8 + - 5 8 + - RBREAK RVTEMP VBAT RVTHRES IT 17 18 19 22 12 13 15 S1A S1B S2A S2B CA CB EGS EDS 14 8 13 8 14 13 MWEAK EBREAK DBODY RSOURCE SOURCE 11 7 3 LSOURCE RLSOURCE CIN RDRAIN EVTHRES 16 21 8 MMED MSTRO DRAIN 2 LDRAIN RLDRAIN DBREAK DPLCAP ESLC RSLC1 10 5 51 50 RSLC2 1 GATE RGATE EVTEMP 9 ESG LGATE RLGATE 20 + - + - + - 6 |
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