NXP Semiconductors

BUK762R6-40E

N-channel TrenchMOS standard level FET

BUK762R6-40E

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Product data sheet

13 July 2012

7 / 13

003aah112

0

100

200

300

400

0

2

4

6

8

(A)

Fig. 8. Transfer characteristics; drain current as a

function of gate-source voltage; typical values

003aah028

0

2

4

6

(A)

max

typ

min

Fig. 9. Sub-threshold drain current as a function of

gate-source voltage

003aah027

0

1

2

3

4

5

-60

0

60

120

180

(V)

max

typ

min

Fig. 10. Gate-source threshold voltage as a function of

junction temperature

003aah115

0

2

4

6

8

10

0

100

200

300

400

(mΩ)

8

10

6

5.5

5

Fig. 11. Drain-source on-state resistance as a function

of drain current; typical values