BUK969R3-100E datasheet(1/14 Pages) NXP

Part #	BUK969R3-100E

Description	N-channel TrenchMOS logic level FET

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Manufacturer	NXP [NXP Semiconductors]

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BUK969R3-100E

N-channel TrenchMOS logic level FET

5 October 2012

Product data sheet

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1. Product profile

1.1 General description

Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.

This product has been designed and qualified to AEC Q101 standard for use in high

performance automotive applications.

1.2 Features and benefits

• AEC Q101 compliant

• Repetitive avalanche rated

• Suitable for thermally demanding environments due to 175 °C rating

• True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C

1.3 Applications

• 12V, 24V and 48V Automotive systems

• Motors, lamps and solenoid control

• Start-Stop micro-hybrid applications

• Transmission control

• Ultra high performance power switching

1.4 Quick reference data

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 175 °C

-

100

V

ID

drain current

VGS = 5 V; Tmb = 25 °C; Fig. 1

-

100

A

Ptot

total power dissipation Tmb = 25 °C; Fig. 2

-

263

W

Static characteristics

RDSon

drain-source on-state

resistance

VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11

-

7.49

9.3

mΩ

Dynamic characteristics

QGD

gate-drain charge

VGS = 5 V; ID = 25 A; VDS = 80 V;

Fig. 13; Fig. 14

-

34

-

nC

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