2SB1240 datasheet(1/4 Pages) ROHM

Part #	2SB1240

Description	Medium power transistor (32V, 2A)

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Manufacturer	ROHM [Rohm]

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c

2009.12 - Rev.B

Medium power transistor (

32V, 2A)

2SB1188 / 2SB1182 / 2SB1240



Features



Dimensions (Unit : mm)

1) Low VCE(sat).

VCE(sat) =

0.5V (Typ.)

(IC/IB =

2A / 0.2A)

2) Complements the 2SD1766 / 2SD1758 / 2SD1862.



Structure

Epitaxial planar type

PNP silicon transistor



Absolute maximum ratings (Ta=25

C)

∗1 Single pulse, Pw=100ms

∗2 When mounted on a 40×40×0.7 mm ceramic board.

∗3 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.

Parameter

VCBO

VCEO

VEBO

PC

Tj

Tstg

−40

V

A(DC)

W

W (Tc

=25

°C)

W

°C

−32

−5

−2

IC

A (Pulse)

−3

0.5

2

10

1

∗2

∗1

∗3

2SB1188

2SB1182

2SB1240

150

−55 to 150

Symbol

Limits

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

(1) Base

(2) Collector

(3) Emitter

ROHM : CPT3

EIAJ : SC-63

2SB1188

2SB1240

2SB1182

(1) Base

(2) Collector

(3) Emitter

ROHM : MPT3

EIAJ : SC-62

(1) Emitter

(2) Collector

(3) Base

ROHM :

ATV

6.8

±0.2

2.5

±0.2

1.05

0.45

±0.1

2.54 2.54

0.5

±0.1

(1)

(2)

(3)

0.65Max.

−0.05

+0.1

−0.1

+0.2

−0.1

(3)

(2)

(1)

3.0

±0.2

1.5

±0.1

1.5

±0.1

0.4

±0.1

0.5

±0.1

0.4

±0.1

0.4

1.5

4.5

1.6

±0.1

−0.1

+0.2

−0.1

+0.2

2.3

±0.2

2.3

±0.2

0.65

±0.1

0.9

0.75

1.0

±0.2

0.55

±0.1

2.3

0.5

±0.1

6.5

±0.2

5.1

C0.5

(3)

(2)

(1)

Abbreviated symbol: BC

∗

∗ Denotes hFE

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