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FDB2670 Datasheet(PDF) 3 Page - Fairchild Semiconductor

Part # FDB2670
Description  200V N-Channel PowerTrench MOSFET
Download  5 Pages
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDB2670 Datasheet(HTML) 3 Page - Fairchild Semiconductor

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FDP2670/FDB2670 Rev C1(W)
Typical Characteristics
0
6
12
18
24
30
0
3
6
9
12
15
VDS, DRAIN-SOURCE VOLTAGE (V)
7.0V
6.0V
VGS = 10V
6.5V
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
0
6
12
18
24
30
ID, DRAIN CURRENT (A)
VGS = 6V
6.5V
10V
7.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.2
0.6
1
1.4
1.8
2.2
2.6
-50
-25
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (
oC)
I
D =10A
V
GS = 10V
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
56789
10
VGS, GATE TO SOURCE VOLTAGE (V)
ID = 5A
TA = 125
oC
T
A = 25
oC
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
3.5
4.5
5.5
6.5
7.5
VGS, GATE TO SOURCE VOLTAGE (V)
T
A = 125
oC
25
oC
-55
oC
VDS = 50V
0.0001
0.001
0.01
0.1
1
10
100
00.2
0.4
0.6
0.811.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
TA = 125
oC
25
oC
-55
oC
V
GS = 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.


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