Electronic Components Datasheet Search |
|
FDB2670 Datasheet(PDF) 4 Page - Fairchild Semiconductor |
|
FDB2670 Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page FDP2670/FDB2670 Rev C1(W) Typical Characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 Qg, GATE CHARGE (nC) I D = 10A V DS = 50V 100V 75V 0 500 1000 1500 2000 0 25 50 75 100 125 150 175 200 VDS, DRAIN TO SOURCE VOLTAGE (V) C ISS CRSS COSS f = 1MHz VGS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.1 1 10 100 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) DC 100ms RDS(ON) LIMIT V GS = 10V SINGLE PULSE RθJC = 1.6 oC/W T C = 25 oC 10ms 1ms 100us 10us 0 500 1000 1500 2000 0.00001 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) SINGLE PULSE RθJC = 1.6°C/W TC = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) RθJC(t) = r(t) * RθJC RθJC = 1.6 °C/W TJ - TC = P * RθJC(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1. Transient thermal response will change depending on the circuit board design. |
Similar Part No. - FDB2670 |
|
Similar Description - FDB2670 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |