FDP2670/FDB2670 Rev C1(W)

Typical Characteristics

0

2

4

6

8

10

0

5

10

15

20

25

30

I

V

100V

75V

0

500

1000

1500

2000

0

25

50

75

100

125

150

175

200

C

ISS

f = 1MHz

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

0.1

1

10

100

1

10

100

1000

DC

100ms

V

SINGLE PULSE

T

10ms

1ms

100us

10us

0

500

1000

1500

2000

0.00001

0.0001

0.001

0.01

0.1

1

SINGLE PULSE

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

0.01

0.1

1

0.00001

0.0001

0.001

0.01

0.1

1

P(pk)

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1.

Transient thermal response will change depending on the circuit board design.