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FDB2670 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDB2670 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 5 page  November 2001 2001 Fairchild Semiconductor Corporation FDP2670/FDB2670 Rev C1(W) FDP2670/FDB2670 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and fast switching will benefit. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 19 A, 200 V. R DS(ON) = 130 m Ω @ V GS = 10 V • Low gate charge (27 nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability S G D TO-220 FDP Series D G S TO-263AB FDB Series S G D Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 200 V VGSS Gate-Source Voltage ± 20 V ID Drain Current – Continuous (Note 1) 19 A – Pulsed (Note 1) 40 A PD Total Power Dissipation @ TC = 25 °C 93 W Derate above 25 °C 0.63 W °/C dv/dt Peak Diode Recovery dv/dt (Note 3) 3.2 V/ns TJ, TSTG Operating and Storage Junction Temperature Range –65 to +175 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case 1.6 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB2670 FDB2670 13’’ 24mm 800 units FDP2670 FDP2670 Tube n/a 45 units |
Similar Part No. - FDB2670 |
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Similar Description - FDB2670 |
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