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FDP42AN15A0 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDP42AN15A0 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 11 page ©2002 Fairchild Semiconductor Corporation FDP42AN15A0 / FDB42AN15A0 Rev. C Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics (V GS = 10V) Drain-Source Diode Characteristics Notes: 1: Starting TJ = 25°C, L = 0.2mH, IAS = 30A. Device Marking Device Package Reel Size Tape Width Quantity FDB42AN15A0 FDB42AN15A0 TO-263AB 330mm 24mm 800 units FDP42AN15A0 FDP42AN15A0 TO-220AB Tube N/A 50 units Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 150 - - V IDSS Zero Gate Voltage Drain Current VDS = 120V - - 1 µA VGS = 0V TC = 150 oC- - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2 - 4 V rDS(ON) Drain to Source On Resistance ID = 12A, VGS = 10V - 0.036 0.042 Ω ID = 6A, VGS = 6V - 0.040 0.060 ID = 12A, VGS = 10V, TJ = 175 oC - 0.090 0.107 CISS Input Capacitance VDS = 25V, VGS = 0V, f = 1MHz - 2150 - pF COSS Output Capacitance - 225 - pF CRSS Reverse Transfer Capacitance - 45 - pF Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V VDD = 75V ID = 12A Ig = 1.0mA 30 39 nC Qg(TH) Threshold Gate Charge VGS = 0V to 2V - 4.2 5.4 nC Qgs Gate to Source Gate Charge - 9.5 - nC Qgs2 Gate Charge Threshold to Plateau - 5.3 - nC Qgd Gate to Drain “Miller” Charge - 6.9 - nC tON Turn-On Time VDD = 75V, ID = 12A VGS = 10V, RGS = 7.5Ω - - 46 ns td(ON) Turn-On Delay Time - 11 - ns tr Rise Time - 19 - ns td(OFF) Turn-Off Delay Time - 27 - ns tf Fall Time - 23 - ns tOFF Turn-Off Time - - 74 ns VSD Source to Drain Diode Voltage ISD = 12A - - 1.25 V ISD = 6A - - 1.0 V trr Reverse Recovery Time ISD = 12A, dISD/dt = 100A/µs- - 82 ns QRR Reverse Recovered Charge ISD = 12A, dISD/dt = 100A/µs - - 204 nC |
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