1

Glass Encapsulated TransGuard

®

GENERAL DESCRIPTION

The Glass Encapsulated TransGuard

zinc oxide (ZnO) based ceramic semiconductor devices with

non-linear, bi-directional V-I characteristics.

They have the advantage of offering bi-directional

overvoltage protection as well as EMI/RFI attenuation in a

single SMT package.

These large case size parts extend TransGuard range into

high energy applications. In addition the glass encapsulation

provides enhanced resistance against harsh environment or

process such as acidic environment, salts or chlorite flux.

Size (EIA)

Length (L)

Width (W)

Max Thickness (T)

Land Length (t)

1210

3.20±0.20

2.49±0.20

1.70

0.14 max.

(0.126±0.008)

(0.098±0.008)

(0.067)

(0.045 max.)

1812

4.50±0.30

3.20±0.30

2.00

1.00 max.

(0.177±0.012)

(0.126±0.012)

(0.079)

(0.040 max.)

2220

5.70±0.40

5.00±0.40

2.50

1.00 max.

(0.224±0.016)

(0.197±0.016)

(0.098)

(0.040 max.)

FEATURES

• Bi-Directional protection

• EMI/RFI attenuation in off-state

• Multi-strike capability

• Sub 1nS response to ESD strike

• High energy / High current

• Glass Encapsulated

APPLICATIONS

• Proffesional / Industrial / Commercial Applications

• IC Protection, DC motor protection

• Relays, Controllers, Sensors

• Smart Grids

• Alarms and more

• Various Applications where Glass Encapsulation is

Needed for Harsh Environment / Acid-Resistance

GENERAL

CHARACTERISTICS

Operating Temperature:

-55ºC to 125ºC

V

Varistor

G

Glass

Encapsulate

Chip

1812

Chip Size

1210

1812

2220

16

Working

Voltage

16 = 16Vdc

22 = 22Vdc

38 = 38Vdc

65 = 65Vdc

P

Engergy

Rating

S = 2.0J

P = 2.7-3.0J

U = 4.0-5.0J

Y = 7.2-12J

400

Clamping

Voltage

400 = 42V

440 = 44V

770 = 77V

131 = 135V

R

Package

D = 7" reel

R = 7" reel

T = 13" reel

P

Termination

P = Ni/Sn plated

HOW TO ORDER