VSMB1940X01

www.vishay.com

Vishay Semiconductors

Rev. 1.4, 02-May-13

1

Document Number: 81933

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

High Speed Infrared Emitting Diode, 940 nm,

GaAlAs Double Hetero

DESCRIPTION

VSMB1940X01 is an infrared, 940 nm emitting diode in

GaAlAs Double Hetero technology with high radiant power

and high speed, molded in clear, untinted 0805 plastic

package for surface mounting (SMD).

FEATURES

• Package type: surface mount

• Package form: 0805

• Dimensions (L x W x H in mm): 2 x 1.25 x 0.85

• AEC-Q101 qualified

• Peak wavelength:



• High reliability

• High radiant power

• High radiant intensity

• High speed

• Angle of half sensitivity:

 = ± 60°

• Low forward voltage

• Suitable for high pulse current operation

• 0805 standard surface-mountable package

• Floor life: 168 h, MSL 3, acc. J-STD-020

• Lead (Pb)-free reflow soldering

• Material categorization: For definitions of compliance

APPLICATIONS

• High speed IR data transmission

• High power emitter for low space applications

• High performance transmissive or reflective sensors

Note

• Test conditions see table “Basic Characteristics“

Note

• MOQ: minimum order quantity

21531

PRODUCT SUMMARY

COMPONENT

 (deg)



VSMB1940X01

6

± 60

940

15

ORDERING INFORMATION

ORDERING CODE

PACKAGING

REMARKS

PACKAGE FORM

VSMB1940X01

Tape and reel

MOQ: 3000 pcs, 3000 pcs/reel

0805

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

5V

Forward current

100

mA

Peak forward current

200

mA

Surge forward current

1A

Power dissipation

160

mW

Junction temperature

100

°C

Operating temperature range

- 40 to + 85

°C

Storage temperature range

- 40 to + 100

°C

Soldering temperature

t

 5 s, 2 mm from case

260

°C

Thermal resistance junction/ambient

J-STD-051, leads 7 mm, soldered on PCB

270

K/W