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FDP6670AL Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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FDP6670AL Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page FDP6670AL/FDB6670AL Rev D(W) Typical Characteristics 0 2 4 6 8 10 0 10 20 30 40 50 Qg, GATE CHARGE (nC) I D = 80A VDS = 10V 20V 15V 0 1000 2000 3000 4000 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Ciss Crss Coss f = 1MHz V GS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 1 10 100 1000 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) DC 100µs 100mS R DS(ON) LIMIT V GS = 10V SINGLE PULSE RθJA = 2.2 oC/W T A = 25 oC 10mS 10µs 1mS 0 1000 2000 3000 4000 5000 0.00001 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) SINGLE PULSE RθJC = 2.2°C/W TA = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) RθJC(t) = r(t) * RθJA RθJA = 2.2 °C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. |
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