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FDP6670AL Datasheet(PDF) 4 Page - Fairchild Semiconductor

Part # FDP6670AL
Description  N-Channel Logic Level PowerTrenchTM MOSFET
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDP6670AL Datasheet(HTML) 4 Page - Fairchild Semiconductor

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FDP6670AL/FDB6670AL Rev D(W)
Typical Characteristics
0
2
4
6
8
10
0
10
20
30
40
50
Qg, GATE CHARGE (nC)
I
D = 80A
VDS = 10V
20V
15V
0
1000
2000
3000
4000
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Ciss
Crss
Coss
f = 1MHz
V
GS = 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
1
10
100
1000
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
DC
100µs
100mS
R
DS(ON) LIMIT
V
GS = 10V
SINGLE PULSE
RθJA = 2.2
oC/W
T
A = 25
oC
10mS
10µs
1mS
0
1000
2000
3000
4000
5000
0.00001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
SINGLE PULSE
RθJC = 2.2°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
RθJC(t) = r(t) * RθJA
RθJA = 2.2 °C/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P(pk
t1
t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.


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