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FDP6676S Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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FDP6676S Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 6 page FDP6676S/FDB6676S Rev C (W) Typical Characteristics (continued) 0 2 4 6 8 10 0 20406080 Qg, GATE CHARGE (nC) ID = 38A V DS = 10V 20V 15V 0 800 1600 2400 3200 4000 4800 5600 6400 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) C ISS C RSS COSS f = 1MHz V GS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 1 10 100 1000 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) DC 1s 100m RDS(ON) LIMIT VGS = 10V SINGLE PULSE RθJC = 1.8 oC/W TA = 25 oC 10ms 10s 0 200 400 600 800 1000 1 10 100 1000 t1, TIME (sec) SINGLE PULSE RθJC = 1.8°C/W TA = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 RθJC(t) = r(t) * RθJC RθJC = 1.8 °C/W TJ - TC = P * RθJC(t) Duty Cycle, D = t1 / t2 P(pk t1 t2 SINGLE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. |
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