STD4N52K3 datasheet(8/21 Pages) STMICROELECTRONICS

Part #	STD4N52K3

Description	N-channel 525 V, 2.5 A, 2.1 廓 typ., SuperMESH3??Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

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Electrical characteristics

STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3

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Doc ID 18206 Rev 2

Figure 14.

Normalized gate threshold voltage

vs temperature

Figure 15.

Normalized on-resistance vs

temperature

Figure 16.

Source-drain diode forward

characteristics

Figure 17.

Maximum avalanche energy vs

starting Tj

VGS(th)

0.8

0.7

0.6

0.5

-75

TJ(°C)

(norm)

-25

0.9

75

25

125

1.0

1.1

AM08646v1

RDS(on)

2.0

1.5

1.0

0.5

-75

TJ(°C)

(norm)

-25

75

25

125

0

2.5

AM08647v1

VSD

0

1

ISD(A)

(V)

0.5

2.5

1.5

2

0.4

0.5

0.6

0.7

0.8

0.9

1.0

TJ=-50°C

TJ=150°C

TJ=25°C

AM08649v1

EAS

0

40

TJ(°C)

(mJ)

20

100

60

80

0

20

40

60

120 140

80

100

120

ID=2.5 A

VDD=50 V

AM08650v1

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STD4N52K3 Datasheet(PDF) 8 Page - STMicroelectronics

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