Electronic Components Datasheet Search |
|
FDS3670 Datasheet(PDF) 4 Page - Fairchild Semiconductor |
|
FDS3670 Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page FDS3670 Rev B1 (W) Typical Characteristics 0 2 4 6 8 10 0 10 2030405060 Qg, GATE CHARGE (nC) ID = 25A VDS = 20V 50V 80V 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0 2040 6080 100 VDS, DRAIN TO SOURCE VOLTAGE (V) CISS CRSS COSS f = 1MHz VGS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100ms 10ms 1ms 100 µs RDS(ON) LIMIT VGS = 10V SINGLE PULSE RθJA = 125 oC/W TA = 25 oC 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) SINGLE PULSE RθJA = 125 oC/W TA = 25 oC Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , TI ME (s e c) 1 S i n g l e P u l s e D = 0.5 0.1 0.05 0.02 0.01 0.2 D u t y C y c l e, D = t /t 1 2 R (t) = r(t) * R R = 125°C/ W θJA θJA θJA T - T = P * R (t) θJA A J P(pk) t1 t 2 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. |
Similar Part No. - FDS3670 |
|
Similar Description - FDS3670 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |