MAX17000

Complete DDR2 and DDR3 Memory

Power-Management Solution

7

Maxim Integrated

ELECTRICAL CHARACTERISTICS (continued)

(Note 1)

PARAMETER

SYMBOL

CONDITIONS

MIN

MAX

UNITS

REFERENCE BUFFER (VTTR)

-10

+10

VTTR Output Accuracy (Adj)

REFIN to VTTR

-20

+20

mV

-10

+10

VTTR Output Accuracy (Preset)

-20

+20

mV

FAULT DETECTION (SMPS)

PGOOD1 Output Low Voltage

0.4

V

FAULT DETECTION (VTT)

PGOOD2 Output Low Voltage

0.4

V

FAULT DETECTION

Threshold

Rising edge, IC disabled below this level;

hysteresis = 200mV

4.0

4.4

V

CURRENT LIMIT

Valley Current-Limit Threshold

15

25

mV

SMPS GATE DRIVERS

DH Gate Driver On-Resistance

BST - LX forced to 5V

5

DL high

5

DL Gate Driver On-Resistance

DL low

3

DL rising

10

Dead Time

DL falling

15

ns

INPUTS AND OUTPUTS

Logic Input Threshold

SHDN, STDBY, SKIP, OVP, rising edge

hysteresis = 300mV/600mV (min/max)

1.3

2

V

and characterization.

capacitor connected from DH to LX. Actual in-circuit times might differ due to MOSFET switching speeds.