©2013 Silicon Storage Technology, Inc.

DS25022B

04/13

7

1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

Data Sheet

Device Operation

Commands are used to initiate the memory operation functions of the device. Commands are written

to the device using standard microprocessor write sequences. A command is written by asserting WE#

low while keeping CE# low. The address bus is latched on the falling edge of WE# or CE#, whichever

occurs last. The data bus is latched on the rising edge of WE# or CE#, whichever occurs first.

Read

The Read operation of the SST39SF010A/020A/040 is controlled by CE# and OE#, both have to be

low for the system to obtain data from the outputs. CE# is used for device selection. When CE# is high,

the chip is deselected and only standby power is consumed. OE# is the output control and is used to

gate data from the output pins. The data bus is in high impedance state when either CE# or OE# is

high. Refer to the Read cycle timing diagram (Figure 5) for further details.

Byte-Program Operation

The SST39SF010A/020A/040 are programmed on a byte-by-byte basis. Before programming, the sec-

tor where the byte exists must be fully erased. The Program operation is accomplished in three steps.

The first step is the three-byte load sequence for Software Data Protection. The second step is to load

byte address and byte data. During the Byte-Program operation, the addresses are latched on the fall-

ing edge of either CE# or WE#, whichever occurs last. The data is latched on the rising edge of either

CE# or WE#, whichever occurs first. The third step is the internal Program operation which is initiated

after the rising edge of the fourth WE# or CE#, whichever occurs first. The Program operation, once

initiated, will be completed, within 20 µs. See Figures 6 and 7 for WE# and CE# controlled Program

operation timing diagrams and Figure 16 for flowcharts. During the Program operation, the only valid

reads are Data# Polling and Toggle Bit. During the internal Program operation, the host is free to per-

form additional tasks. Any commands written during the internal Program operation will be ignored.

Sector-Erase Operation

The Sector-Erase operation allows the system to erase the device on a sector-by-sector basis. The

sector architecture is based on uniform sector size of 4 KByte. The Sector-Erase operation is initiated

by executing a six-byte command load sequence for Software Data Protection with Sector-Erase com-

mand (30H) and sector address (SA) in the last bus cycle. The sector address is latched on the falling

edge of the sixth WE# pulse, while the command (30H) is latched on the rising edge of the sixth WE#

pulse. The internal Erase operation begins after the sixth WE# pulse. The End-of-Erase can be deter-

mined using either Data# Polling or Toggle Bit methods. See Figure 10 for timing waveforms. Any com-

mands written during the Sector-Erase operation will be ignored.

Chip-Erase Operation

The SST39SF010A/020A/040 provide Chip-Erase operation, which allows the user to erase the entire

memory array to the “1s” state. This is useful when the entire device must be quickly erased.

The Chip-Erase operation is initiated by executing a six- byte Software Data Protection command

sequence with Chip-Erase command (10H) with address 5555H in the last byte sequence. The internal

Erase operation begins with the rising edge of the sixth WE# or CE#, whichever occurs first. During the

internal Erase operation, the only valid read is Toggle Bit or Data# Polling. See Table 4 for the com-

mand sequence, Figure 11 for timing diagram, and Figure 19 for the flowchart. Any commands written

during the Chip-Erase operation will be ignored.