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2509NZ Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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2509NZ Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page FDW2509NZ Rev. C(W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 20 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 11 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA IGSS Gate–Body Leakage VGS = ±12 V, V DS = 0 V ± 10 µA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.6 0.8 1.5 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C –3 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 4.5 V, ID = 7.1 A VGS = 2.5 V, ID = 6.2 A VGS = 4.5 V, ID = 7.1A, TJ=125 °C 15 18 20 20 26 29 m Ω ID(on) (Note 4) On–State Drain Current VGS = 4.5 V, VDS = 5 V 30 A gFS Forward Transconductance VDS = 5 V, ID = 7.1 A 36 S Dynamic Characteristics Ciss Input Capacitance 1263 pF Coss Output Capacitance 327 pF Crss Reverse Transfer Capacitance VDS = 10 V, V GS = 0 V, f = 1.0 MHz 179 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.9 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time 11 20 ns tr Turn–On Rise Time 15 27 ns td(off) Turn–Off Delay Time 27 43 ns tf Turn–Off Fall Time VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 12 22 ns Qg Total Gate Charge 13 19 nC Qgs Gate–Source Charge 2 nC Qgd Gate–Drain Charge VDS = 10 V, ID = 7.1 A, VGS = 4.5 V 4 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 1.3 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) 1.2 V trr Diode Reverse Recovery Time IF = 7.1 A, diF/dt = 100 A/µs 20 nS Qrr Diode Reverse Recovery Charge 14 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA is 77°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4. b) RθJA is 114 °C/W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 4. ID(on) parameter is guaranteed by design and will not be subjected to 100% production testing. Please refer to Fig 1 (On-Region Characteristics). |
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