FDW2509NZ Rev. C(W)

Electrical Characteristics

T

A

= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max Units

Off Characteristics

Drain–Source Breakdown Voltage

µA

20

V

∆T

J

Breakdown Voltage Temperature

Coefficient

µA, Referenced to 25°C

11

mV/

°C

Zero Gate Voltage Drain Current

1

µA

Gate–Body Leakage

±12 V, V

± 10

µA

On Characteristics

(Note 2)

Gate Threshold Voltage

µA

0.6

0.8

1.5

V

∆T

J

Gate Threshold Voltage

Temperature Coefficient

µA, Referenced to 25°C

–3

mV/

°C

Static Drain–Source

On–Resistance

°C

15

18

20

20

26

29

m

Ω

30

A

Forward Transconductance

36

S

Dynamic Characteristics

Input Capacitance

1263

pF

Output Capacitance

327

pF

Reverse Transfer Capacitance

f = 1.0 MHz

179

pF

Gate Resistance

1.9

Ω

Turn–On Delay Time

11

20

ns

Turn–On Rise Time

15

27

ns

Turn–Off Delay Time

27

43

ns

Turn–Off Fall Time

Ω

12

22

ns

Total Gate Charge

13

19

nC

Gate–Source Charge

2

nC

Gate–Drain Charge

4

nC

Drain–Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain–Source Diode Forward Current

1.3

A

Drain–Source Diode Forward

Voltage

(Note 2)

1.2

V

Diode Reverse Recovery Time

20

nS

Diode Reverse Recovery Charge

14

nC

Notes:

2. Pulse Test: Pulse Width < 300

µs, Duty Cycle < 2.0%

3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

4.