MBT3904DW2T1G datasheet(3/8 Pages) ONSEMI

Part #	MBT3904DW2T1G

Description	Dual General Purpose Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MBT3904DW1T1G, MBT3904DW2T1G, SMBT3904DW1T1G

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3

SWITCHING CHARACTERISTICS

Characteristic

Symbol

Min

Max

Unit

Delay Time

(VCC = 3.0 Vdc, VBE = −0.5 Vdc)

td

−

35

ns

Rise Time

(IC = 10 mAdc, IB1 = 1.0 mAdc)

tr

−

35

Storage Time

(VCC = 3.0 Vdc, IC = 10 mAdc)

ts

−

200

ns

Fall Time

(IB1 = IB2 = 1.0 mAdc)

tf

−

50

Figure 1. Delay and Rise Time

Equivalent Test Circuit

Figure 2. Storage and Fall Time

Equivalent Test Circuit

+3 V

275

10 k

1N916

Cs < 4 pF*

+3 V

275

10 k

Cs < 4 pF*

< 1 ns

-0.5 V

+10.9 V

300 ns

DUTY CYCLE = 2%

< 1 ns

-9.1 V

′

+10.9 V

DUTY CYCLE = 2%

t1

0

10 < t1 < 500 ms

* Total shunt capacitance of test jig and connectors

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MBT3904DW2T1G Datasheet(PDF) 3 Page - ON Semiconductor

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