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UCC27517DBVR Datasheet(PDF) 3 Page - Texas Instruments |
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UCC27517DBVR Datasheet(HTML) 3 Page - Texas Instruments |
3 / 31 page UCC27517 UCC27516 www.ti.com SLUSAY4C – MARCH 2012 – REVISED MAY 2013 ABSOLUTE MAXIMUM RATINGS (1) (2) (3) over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT Supply voltage range VDD -0.3 20 DC -0.3 VDD + 0.3 V OUT voltage Repetitive pulse less than 200 ns(4) -2 VDD + 0.3 Output continuous current IOUT_DC (source/sink) 0.3 A Output pulsed current (0.5 µs) IOUT_pulsed(source/sink) 4 IN+, IN-(5) -0.3 20 Human Body Model, HBM 4000 V ESD Charged Device Model, CDM 1000 Operating virtual junction temperature range, TJ -40 150 Storage temperature range, TSTG -65 150 °C Soldering, 10 sec. 300 Lead temperature Reflow 260 (1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All voltages are with respect to GND unless otherwise noted. Currents are positive into, negative out of the specified terminal. See Packaging Section of the datasheet for thermal limitations and considerations of packages. (3) These devices are sensitive to electrostatic discharge; follow proper device-handling procedures. (4) Values are verified by characterization on bench. (5) Maximum voltage on input pins is not restricted by the voltage on the VDD pin. THERMAL INFORMATION UCC27516 UCC27517 THERMAL METRIC(1) WSON SOT-23 DBV UNITS 6 PINS 5 PINS θJA Junction-to-ambient thermal resistance(2) 85.6 217.6 θJCtop Junction-to-case (top) thermal resistance(3) 100.1 85.8 θJB Junction-to-board thermal resistance(4) 58.6 44.0 °C/W ψJT Junction-to-top characterization parameter(5) 7.5 4.0 ψJB Junction-to-board characterization parameter(6) 58.7 43.2 θJCbot Junction-to-case (bottom) thermal resistance(7) 23.7 n/a (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. (2) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as specified in JESD51-7, in an environment described in JESD51-2a. (3) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC- standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. (4) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8. (5) The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7). (6) The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA , using a procedure described in JESD51-2a (sections 6 and 7). (7) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. Spacer NOTE Under identical power dissipation conditions, the DRS package will allow to maintain a lower die temperature than the DBV. θJA metric should be used for comparison of power dissipation capability between different packages (Refer to the APPLICATION INFORMATION Section). Copyright © 2012–2013, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: UCC27517 UCC27516 |
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