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UCC27322DGNG4 Datasheet(PDF) 3 Page - Texas Instruments |
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UCC27322DGNG4 Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 31 page  UCC27321 , UCC27322 UCC37321, UCC37322 www.ti.com SLUS504G – SEPTEMBER 2002 – REVISED MAY 2013 ELECTRICAL CHARACTERISTICS VDD = 4.5 V to 15 V, TA = –40°C to 105°C for UCC2732x, TA = 0°C to 70°C for UCC3732x, TA = TJ, (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Input (IN) VIN_H, logic 1 input threshold 2 V VIN_H, logic 1 input threshold 1 V Input current 0 V ≤ VIN ≤ VDD –10 0 10 µA Output (OUT) Peak output current(1)(2) VDD = 14 V, 9 A VOH, output high level VOH = VDD – VOUT, IOUT = –10mA 150 300 mV VOL, output high level IOUT = 10 mA 11 25 mV Output resistance high(3) IOUT = –10mA, VDD = 14 V 15 25 Ω Output resistance low(3) IOUT = 10 mA, V VDD = 14 1.1 2.2 Ω Latch--up protection(1) 500 mA Overall IN = LO, EN = LO, VDD = 15 V 150 225 IN = HI, EN = LO, VDD = 15 V 440 650 UCC37321 UCC27321 IN = LO, EN = HI, VDD = 15 V 370 550 IN = HI, EN = HI, VDD = 15 V 370 550 IDD, static operating current µA IN = LO, EN = LO, VDD = 15 V 150 225 IN = HI, EN = LO, VDD = 15 V 450 650 UCC37322 UCC27322 IN = LO, EN = HI, VDD = 15 V 75 125 IN = HI, EN = HI, VDD = 15 V 675 1000 Enable (ENBL) VIN_H, high-level input voltage LO to HI transition 1.7 2.2 2.7 V VIN_L, low-level input voltage HI to LO transition 1.1 1.6 2.0 V Hysteresis 0.25 0.55 0.90 RENBL, enable impedance VDD = 14 V, ENBL = GND 75 100 135 k Ω tD3, propagation delay time (4) CLOAD = 10 nF 60 90 ns tD4, propagation delay time (4) CLOAD = 10 nF 60 90 Switching Time(5) tR, rise time (OUT) CLOAD = 10 nF 20 70 tF, fall time (OUT) CLOAD = 10 nF 20 30 ns tD1, propagation delay, IN rising (IN to OUT) CLOAD = 10 nF 25 70 tD2, propagation delay, IN falling (IN to OUT) CLOAD = 10 nF 35 70 (1) Ensured by design. Not tested in production. (2) The pullup / pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The peak output current rating is the combined current from the bipolar and MOSFET transistors. (3) The pullup / pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The output resistance is the RDS(ON) of the MOSFET transistor when the voltage on the driver output is less than the saturation voltage of the bipolar transistor. (4) See Figure 2. (5) See Figure 1 for switching waveforms. Copyright © 2002–2013, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: UCC27321 UCC27322 UCC37321 UCC37322 |
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