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DTA114GKA Datasheet(PDF) 2 Page - Rohm |
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DTA114GKA Datasheet(HTML) 2 Page - Rohm |
2 / 3 page 2/2 www.rohm.com ○ c 2009 ROHM Co., Ltd. All rights reserved. 2009.06 - Rev.B Data Sheet DTA114GUA / DTA114GKA Electrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO −50 −− VIC = −50μA IC = −1mA IE = −720μA VCB = −50V IC = −10mA, IB= −0.5mA VEB = −4V VCE = −10V, IE=50mA, f=100MHz BVCEO −50 −− V BVEBO −5 −− V ICBO −− −0.5 μA VCE(sat) −− −0.3 V IEBO −300 −−580 μA IC = −5mA, VCE= −5V hFE 30 −− − fT − 250 10 − MHz − R1 713 k Ω Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Emitter-base resistance Transition frequency ∗ Characteristics of built-in transistor ∗ Electrical characteristic curves 100 200 500 20 50 2 5 10 0.5 2 5 1 10 20 50 100 Ta=25˚C VO =5V Fig.1 DC Current gain vs. Collector Current COLLECTOR CURRENT : Ic (mA) 1000 200 500 100 10 20 50 1 2 5 10 20 50 100 Ta=25˚C Fig.2 Collector-emitter saturation voltage vs. Collector Current COLLECTOR CURRENT : VDS (V) IC / IB =20 / 1 IC / IB =10 / 1 |
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