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KMPC8250ACZUMHBC Datasheet(PDF) 7 Page - Freescale Semiconductor, Inc |
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KMPC8250ACZUMHBC Datasheet(HTML) 7 Page - Freescale Semiconductor, Inc |
7 / 62 page MPC8250 Hardware Specifications, Rev. 2 Freescale Semiconductor 7 Electrical and Thermal Characteristics NOTE: Core, PLL, and I/O Supply Voltages VDDH, VCCSYN, and VDD must track each other and both must vary in the same direction—in the positive direction (+5% and +0.1 Vdc) or in the negative direction (-5% and -0.1 Vdc). This device contains circuitry protecting against damage due to high static voltage or electrical fields; however, it is advised that normal precautions be taken to avoid application of any voltages higher than maximum-rated voltages to this high-impedance circuit. Reliability of operation is enhanced if unused inputs are tied to an appropriate logic voltage level (either GND or VCC). Figure 2 shows the undershoot and overshoot voltage of the 60x and local bus memory interface of the MPC8280. Note that in PCI mode the I/O interface is different. Figure 2. Overshoot/Undershoot Voltage Table 3 shows DC electrical characteristics. Table 3. DC Electrical Characteristics 1 Characteristic Symbol Min Max Unit Input high voltage, all inputs except CLKIN VIH 2.0 3.465 V Input low voltage VIL GND 0.8 V CLKIN input high voltage VIHC 2.4 3.465 V CLKIN input low voltage VILC GND 0.4 V Input leakage current, VIN = VDDH 2 IIN —10 µA Hi-Z (off state) leakage current, VIN = VDDH 2 IOZ —10 µA Signal low input current, VIL = 0.8 V IL —1 µA Signal high input current, VIH = 2.0 V IH —1 µA Output high voltage, IOH = –2 mA VOH 2.4 — V GND GND – 0.3 V GND – 1.0 V Not to exceed 10% GVDD of tSDRAM_CLK GVDD + 5% 4 V VIH VIL |
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