©2001 Fairchild Semiconductor Corporation

September 2001

FGS15N40L Rev. A1

IGBT

FGS15N40L

General Description

Insulated

Gate Bipolar Transistors(IGBTs)

with trench

gate structure have superior performance in conductance

and switching to planar gate structure and also have wide

noise immunity.

These devices are well suitable for

strobe application

Features

• High Input Impedance

• High Peak Current Capability (130A)

• Easy Gate Drive

Absolute Maximum Ratings

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics

Notes: Mounted on 1” square PCB(FR4 or G-10 Material)

Symbol

Description

FGS15N40L

Units

Collector-Emitter Voltage

400

V

Gate-Emitter Voltage

± 6V

Pulsed Collector Current

130

A

MaximumPowerDissipation

W

Operating Junction Temperature

-40 to +150

°C

Storage Temperature Range

-40 to +150

°C

Maximum Lead Temp. for soldering

PurPoses from case for 5 secnds

300

°C

Symbol

Parameter

Typ.

Max.

Units

Thermal Resistance, Junction-to-Ambient(PCB Mount)

--

62.5

°C/W

Application

• Strobe Flash

G

C

E

E

E

E

G

C

C

C

C

8-SOP