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FGS15N40L Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FGS15N40L Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page ©2001 Fairchild Semiconductor Corporation September 2001 FGS15N40L Rev. A1 IGBT FGS15N40L General Description Insulated Gate Bipolar Transistors(IGBTs) with trench gate structure have superior performance in conductance and switching to planar gate structure and also have wide noise immunity. These devices are well suitable for strobe application Features • High Input Impedance • High Peak Current Capability (130A) • Easy Gate Drive Absolute Maximum Ratings TC = 25°C unless otherrwise noted Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Notes: Mounted on 1” square PCB(FR4 or G-10 Material) Symbol Description FGS15N40L Units VCES Collector-Emitter Voltage 400 V VGES Gate-Emitter Voltage ± 6V ICM (1) Pulsed Collector Current 130 A PC MaximumPowerDissipation @ Ta = 25°C2.0 W TJ Operating Junction Temperature -40 to +150 °C Tstg Storage Temperature Range -40 to +150 °C TL Maximum Lead Temp. for soldering PurPoses from case for 5 secnds 300 °C Symbol Parameter Typ. Max. Units RθJA Thermal Resistance, Junction-to-Ambient(PCB Mount) -- 62.5 °C/W Application • Strobe Flash G C E E E E G C C C C 8-SOP |
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