Part Name
         Description
FJAF6810

 NPN Triple Diffused Planar Silicon Transistor ( 5 Page)


FAIRCHILD
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©2001 Fairchild Semiconductor Corporation
Rev. A2, May 2001
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter On Voltage
Figure 6. Resistive Load Switching Time
0246
8
10
12
14
0
2
4
6
8
10
I
B=2.0A
I
B=0.6A
I
B=0.4A
I
B=0.2A
V
CE [V], COLLECTOR-EMITTER VOLTAGE
0.1
1
10
100
1
10
100
V
CE = 5V
Ta = 125
0
C
Ta = 25
0
C
Ta = - 25
0
C
I
C [A], COLLECTOR CURRENT
0.1
1
10
0.01
0.1
1
10
100
I
C
= 5 I
B
Ta = 125
0
C
Ta = 25
0
C
Ta = - 25
0
C
I
C [A], COLLECTOR CURRENT
0.1
1
10
0.01
0.1
1
10
I
C = 3 IB
Ta = 125
0
C
Ta = 25
0
C
Ta = - 25
0
C
I
C [A], COLLECTOR CURRENT
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
12
14
V
CE
= 5V
- 25
0
C
25
0
C
Ta = 125
0
C
V
BE [V], BASE-EMITTER VOLTAGE
110
0.01
0.1
1
10
t
F
t
STG
V
CC = 200V,
I
C = 6A, IB1 = 1.2A
I
B2 [A], REVERSE BASE CURRENT
1  2  3  4  5 



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