The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

SILICON POWER TRANSISTOR

2SC3632-Z

NPN SILICON EPITAXIAL TRANSISTOR

DATA SHEET

Document No. D18267EJ3V0DS00 (3rd edition)

(Previous No. TC-1665A)

Date Published July 2006 NS CP(K)

Printed in Japan

1985, 2006

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

DESCRIPTION

The 2SC3632-Z is designed for High Voltage Switching, especially in

Hybrid Integrated Circuits.

FEATURES

• High Speed

• Complement to 2SA1413-Z

°C)

Collector to Base Voltage

600

V

Collector to Emitter Voltage

600

V

Emitter to Base Voltage

7

V

Collector Current (DC)

1

A

Collector Current (pulse)

Note 1

2

A

2.0

W

Junction Temperature

150

°C

Storage Temperature

−55 to +150

°C

Notes 1. PW

≤ 10 ms, Duty Cycle ≤ 50%

2. When mounted on ceramic substrate of 7.5 cm

PACKAGE DRAWING (Unit: mm)

12 3

4

6.5 ±0.2

4.4 ±0.2

5.0 ±0.2

0.5 ±0.1

0.5 ±0.1

2.3 ±0.2

0.5 ±0.1

Note

Note

0.15 ±0.15

2.3 ±0.3

2.3 ±0.3

TO-252 (MP-3Z)

1. Base

2. Collector

3. Emitter

4. Collector Fin

Note The depth of notch at the top of the fin is

from 0 to 0.2 mm.

<R>