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2SJ681Q Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SJ681Q Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 6 page  2SJ681 2010-03-01 3 ID – VDS Drain −source voltage VDS (V) 0 −5 −1 −3 −2 −4 0 −0.4 −2.0 −0.8 −1.2 −1.6 −10 −8 −6 −2.8 −3.5 −4. VGS = −2.5V Common source Tc = 25°C Pulse test ID – VDS Drain −source voltage VDS (V) 0 −10 −2 −6 −4 −8 −2 0 −10 −4 −6 −8 −10 −8 −6 −4 −3.5 −3 VGS = −2.5 V Common source Tc = 25°C Pulse test ID – VGS Gate −source voltage VGS (V) 0 −10 −2 −6 −8 −1 0 −5 −3 −4 100 25 Tc = −55°C Common source VDS = −10 V Pulse test VDS – VGS Gate −source voltage VGS (V) 0 −2.0 −0.4 −1.2 −0.8 −1.6 −4 0 −20 −8 −12 −16 −5 −2.5 ID = −1.2 A Common source Tc = 25°C Pulse test ⎪Yfs⎪ − ID Drain current ID (A) 0.1 100 10 1 −0.1 −100 −1 Common source VDS = −10 V Pulse test Tc = −55°C 25 100 RDS (ON) − ID Drain current ID (A) 0 0.4 0.5 0 −2 −10 Common source Tc = 25°C Pulse test −10 −4 −3 −4 −2 0.3 0.1 0.2 −6 −8 VGS = −10V −4 V |
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