MJD45H11-1G datasheet(6/9 Pages) ONSEMI

Part #	MJD45H11-1G

Description	Complementary Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP)

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Figure 10. MJD44H11 Saturation Voltage

VBE(sat)

Figure 11. MJD45H11 Saturation Voltage

VBE(sat)

IC, COLLECTOR CURRENT (A)

10

1

0.1

0.01

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Figure 12. MJD44H11 Collector Saturation

Region

Figure 13. MJD45H11 Collector Saturation

Region

IB, BASE CURRENT (mA)

10,000

1000

100

10

1

0.1

0

0.4

0.2

0.6

1.0

1.4

1.8

2.0

Figure 14. MJD44H11 Capacitance

Figure 15. MJD45H11 Capacitance

VR, REVERSE VOLTAGE (V)

100

10

1

0.1

10

100

1000

150°C

−55°C

25°C

IC/IB = 20

10

1

0.1

0.01

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

150°C

−55°C

25°C

IC/IB = 20

0.8

1.2

1.6

TA = 25°C

IC = 8 A

1 A

IC = 3 A

0.5 A

IC = 0.1 A

10,000

1000

100

10

1

0.1

0

0.4

0.2

0.6

1.0

1.4

1.8

2.0

0.8

1.2

1.6

TA = 25°C

Cob

VR, REVERSE VOLTAGE (V)

100

10

1

0.1

10

100

1000

Cob

IC = 8 A

1 A

IC = 3 A

0.5 A

IC = 0.1 A

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