TLV2231, TLV2231Y

Advanced LinCMOS

 RAIL-TO-RAIL

LOW-POWER SINGLE OPERATIONAL AMPLIFIERS

SLOS158D – JUNE 1996 – REVISED APRIL 2001

2

POST OFFICE BOX 655303

AVAILABLE OPTIONS

TA

VIOmax AT 25°C

PACKAGED DEVICES

SYMBOL

CHIP

FORM‡

TA

VIOmax AT 25°C

SOT-23 (DBV)†

SYMBOL

FORM‡

(Y)

0

°C to 70°C

3 mV

TLV2231CDBV

VAEC

TLV2231Y

– 40

°C to 85°C

3 mV

TLV2231IDBV

VAEI

TLV2231Y

† The DBV package available in tape and reel only.

‡ Chip forms are tested at TA = 25°C only.

TLV2231Y chip information

This chip, when properly assembled, displays characteristics similar to the TLV2231C. Thermal compression

or ultrasonic bonding may be used on the doped-aluminum bonding pads. This chip may be mounted with

conductive epoxy or a gold-silicon preform.

BONDING PAD ASSIGNMENTS

CHIP THICKNESS: 10 MILS TYPICAL

BONDING PADS: 4

× 4 MILS MINIMUM

TJmax = 150°C

TOLERANCES ARE

±10%.

ALL DIMENSIONS ARE IN MILS.

PIN (2) IS INTERNALLY CONNECTED

TO BACKSIDE OF CHIP.

+

–

OUT

IN +

IN –

VDD +

(5)

(1)

(3)

(4)

(2)

VDD – / GND

40

(3)

(2)

(1)

(5)

(4)

32