2

Symbol

Parameter

Units

Absolute Max.

V

cc

Device Voltage, RF output to ground (T = 25

°C)

V

+7

P

in

CW RF Input Power (Vcc = 5V)

dBm

+20

W

0.47

Junction Temperature

°C

150

Storage Temperature

°C

-65 to 150

Notes:

1. Operation of this device in excess of any of

these limits may cause permanent damage.

2. Thermal resistance measured using 150

°C

Liquid Crystal Measurement Technique.

3. Board (package belly) temperature, Tb, is

25

°C. Derate 5 mW/°C for Tb> 94.8°C.

Electrical Specifications

Symbol

Parameter and Test Condition

Units

Min.

Typ.

Max.

Std Dev.

2

)

dB

20

21.5

0.2

∆Gp

Power Gain Flatness,

f = 0.1 ~ 2.5 GHz

dB

0.6

f = 0.1 ~ 3.5 GHz

2.7

Noise Figure

dB

3.5

4

0.11

Output Power at 1dB Gain Compression

dBm

12.7

0.14

Output Third Order Intercept Point

dBm

22.9

0.14

[1]

Input VSWR

1.1

[1]

Output VSWR

1.2

Device Current

mA

46

57

0.6

Group Delay

ps

160

Notes:

1. Measurements taken on 50

Ω test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard

deviation and typical data based on at least 500 parts sample size from 6 wafer lots. Future wafers allocated to this product may have nominal values

anywhere within the upper and lower spec limits.

Figure 1. ABA-53563 Production Test Circuit.

RF Output

RF Input

Vcc

RFC

θ