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IXDE504SIAT Datasheet(PDF) 1 Page - IXYS Corporation

Part # IXDE504SIAT
Description  4 Ampere Dual Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXDE504SIAT Datasheet(HTML) 1 Page - IXYS Corporation

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First Release
Features
• Built using the advantages and compatibility
of CMOS and IXYS HDMOSTM processes
• Latch-Up Protected up to 4 Amps
• High 4A Peak Output Current
• Wide Operating Range: 4.5V to 30V
• -55°C to +125°C Extended Operating
Temperature
• Ability to Disable Output under Faults
• High Capacitive Load
Drive Capability: 1800pF in <15ns
• Matched Rise And Fall Times
• Low Propagation Delay Time
• Low Output Impedance
• Low Supply Current
• Two Drivers in a Single Package
Applications
• Limiting di/dt under Short Circuit
• Driving MOSFETs and IGBTs
• Motor Controls
• Line Drivers
• Pulse Generators
• Local Power ON/OFF Switch
• Switch Mode Power Supplies (SMPS)
• DC to DC Converters
• Pulse Transformer Driver
• Class D Switching Amplifiers
• Power Charge Pumps
General Description
The IXDD504 and IXDE504 each consist of two 4-Amp
CMOS high speed MOSFET gate drivers for driving the
latest IXYS MOSFETs & IGBTs. Each of the dual outputs
can source and sink 4 Amps of peak current while produc-
ing voltage rise and fall times of less than 15ns. The input
of each driver is TTL or CMOS compatible and is virtually
immune to latch up. Patented* design innovations eliminate
cross conduction and current "shoot-through". Improved
speed and drive capabilities are further enhanced by fast,
matched rise and fall times.
Additionally, each IXDD504 or IXDE504 driver incorporates a
unique ability to disable the output under fault conditions.
When a logical low is forced into the Enable input of a
driver, both of it's final output stage MOSFETs (NMOS and
PMOS) are turned off. As a result, the respective output of
the IXDD504 enters a tristate mode and, with additional
cicuitry, achieves a soft turn-off of the MOSFET/IGBT when
a short circuit is detected. This helps prevent damage that
could occur to the MOSFET/IGBT if it were to be switched
off abruptly due to a dv/dt over-voltage transient.
The IXDD504 and IXDE504 are each available in the 8-Pin
P-DIP (PI) package, the 8-Pin SOIC (SIA) package, and the
8-Lead DFN (D2) package, (which occupies less than 65%
of the board area of the 8-Pin SOIC).
*United States Patent 6,917,227
Ordering Information
Part Number
Description
Package
Type
Packing Style
Pack
Qty
Configuration
IXDD504PI
4A Low Side Gate Driver I.C.
8-Pin PDIP
Tube
50
IXDD504SIA
4A Low Side Gate Driver I.C.
8-Pin SOIC
Tube
94
IXDD504SIAT/R
4A Low Side Gate Driver I.C.
8-Pin SOIC
13” Tape and Reel
2500
IXDD504D2
4A Low Side Gate Driver I.C.
8-Lead DFN
2” x 2” Waffle Pack
56
IXDD504D2T/R
4A Low Side Gate Driver I.C.
8-Lead DFN
13” Tape and Reel
2500
Dual Non-
Inverting
Drivers with
Enable
IXDE504PI
4A Low Side Gate Driver I.C.
8-Pin PDIP
Tube
50
IXDE504SIA
4A Low Side Gate Driver I.C.
8-Pin SOIC
Tube
94
IXDE504SIAT/R
4A Low Side Gate Driver I.C.
8-Pin SOIC
13” Tape and Reel
2500
IXDE504D2
4A Low Side Gate Driver I.C.
8-Lead DFN
2” x 2” Waffle Pack
56
IXDE504D2T/R
4A Low Side Gate Driver I.C.
8-Lead DFN
13” Tape and Reel
2500
Dual Inverting
Drivers
Inverting with
Enable
DS99568A(10/07)
NOTE: All parts are lead-free and RoHS Compliant
Copyright © 2007 IXYS CORPORATION All rights reserved
IXDD504/ IXDE504
4 Ampere Dual Low-Side Ultrafast MOSFET Drivers
with Enable for fast, controlled shutdown


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