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IXDE504SIAT Datasheet(PDF) 1 Page - IXYS Corporation |
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IXDE504SIAT Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 13 page First Release Features • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 4 Amps • High 4A Peak Output Current • Wide Operating Range: 4.5V to 30V • -55°C to +125°C Extended Operating Temperature • Ability to Disable Output under Faults • High Capacitive Load Drive Capability: 1800pF in <15ns • Matched Rise And Fall Times • Low Propagation Delay Time • Low Output Impedance • Low Supply Current • Two Drivers in a Single Package Applications • Limiting di/dt under Short Circuit • Driving MOSFETs and IGBTs • Motor Controls • Line Drivers • Pulse Generators • Local Power ON/OFF Switch • Switch Mode Power Supplies (SMPS) • DC to DC Converters • Pulse Transformer Driver • Class D Switching Amplifiers • Power Charge Pumps General Description The IXDD504 and IXDE504 each consist of two 4-Amp CMOS high speed MOSFET gate drivers for driving the latest IXYS MOSFETs & IGBTs. Each of the dual outputs can source and sink 4 Amps of peak current while produc- ing voltage rise and fall times of less than 15ns. The input of each driver is TTL or CMOS compatible and is virtually immune to latch up. Patented* design innovations eliminate cross conduction and current "shoot-through". Improved speed and drive capabilities are further enhanced by fast, matched rise and fall times. Additionally, each IXDD504 or IXDE504 driver incorporates a unique ability to disable the output under fault conditions. When a logical low is forced into the Enable input of a driver, both of it's final output stage MOSFETs (NMOS and PMOS) are turned off. As a result, the respective output of the IXDD504 enters a tristate mode and, with additional cicuitry, achieves a soft turn-off of the MOSFET/IGBT when a short circuit is detected. This helps prevent damage that could occur to the MOSFET/IGBT if it were to be switched off abruptly due to a dv/dt over-voltage transient. The IXDD504 and IXDE504 are each available in the 8-Pin P-DIP (PI) package, the 8-Pin SOIC (SIA) package, and the 8-Lead DFN (D2) package, (which occupies less than 65% of the board area of the 8-Pin SOIC). *United States Patent 6,917,227 Ordering Information Part Number Description Package Type Packing Style Pack Qty Configuration IXDD504PI 4A Low Side Gate Driver I.C. 8-Pin PDIP Tube 50 IXDD504SIA 4A Low Side Gate Driver I.C. 8-Pin SOIC Tube 94 IXDD504SIAT/R 4A Low Side Gate Driver I.C. 8-Pin SOIC 13” Tape and Reel 2500 IXDD504D2 4A Low Side Gate Driver I.C. 8-Lead DFN 2” x 2” Waffle Pack 56 IXDD504D2T/R 4A Low Side Gate Driver I.C. 8-Lead DFN 13” Tape and Reel 2500 Dual Non- Inverting Drivers with Enable IXDE504PI 4A Low Side Gate Driver I.C. 8-Pin PDIP Tube 50 IXDE504SIA 4A Low Side Gate Driver I.C. 8-Pin SOIC Tube 94 IXDE504SIAT/R 4A Low Side Gate Driver I.C. 8-Pin SOIC 13” Tape and Reel 2500 IXDE504D2 4A Low Side Gate Driver I.C. 8-Lead DFN 2” x 2” Waffle Pack 56 IXDE504D2T/R 4A Low Side Gate Driver I.C. 8-Lead DFN 13” Tape and Reel 2500 Dual Inverting Drivers Inverting with Enable DS99568A(10/07) NOTE: All parts are lead-free and RoHS Compliant Copyright © 2007 IXYS CORPORATION All rights reserved IXDD504/ IXDE504 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown |
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