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IXTH200N10T Datasheet(PDF) 4 Page - IXYS Corporation |
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IXTH200N10T Datasheet(HTML) 4 Page - IXYS Corporation |
4 / 5 page IXYS reserves the right to change limits, test conditions, and dimensions. IXTH200N10T IXTQ200N10T IXYS REF: T_200N10T(6V)9-30-08-D Fig. 7. Input Admittance 0 25 50 75 100 125 150 175 200 225 250 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 VGS - Volts TJ = 150ºC 25ºC - 40ºC Fig. 8. Transconductance 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 175 200 225 250 ID - Amperes TJ = - 40ºC 25ºC 150ºC Fig. 9. Forward Voltage Drop of Intrinsic Diode 0 30 60 90 120 150 180 210 240 270 300 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VSD - Volts TJ = 150ºC TJ = 25ºC Fig. 10. Gate Charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 QG - NanoCoulombs VDS = 50V I D = 25A I G = 10mA Fig. 11. Capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 VDS - Volts f = 1MHz Ciss Crss Coss Fig. 12. Maximum Transient Thermal Impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds |
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