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IXTV110N25TS Datasheet(PDF) 5 Page - IXYS Corporation

Part # IXTV110N25TS
Description  TrenchTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTV110N25TS Datasheet(HTML) 5 Page - IXYS Corporation

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© 2012 IXYS CORPORATION, All Rights Reserved
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
18
20
22
24
26
28
30
32
20
30
40
50
60
70
80
90
100
110
120
ID - Amperes
RG = 2Ω, VGS = 15V
VDS = 125V
TJ = 125ºC
TJ = 25ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
20
25
30
35
40
45
50
23
45
678
9
10
RG - Ohms
19
21
23
25
27
29
31
t r
td(on) - - - -
TJ = 125ºC, VGS = 15V
VDS = 125V
I D = 110A, 55A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
14
18
22
26
30
34
38
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
50
54
58
62
66
70
74
t f
td(off) - - - -
RG = 2Ω, VGS = 15V
VDS = 125V
I D = 55A
I D = 110A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
20
22
24
26
28
30
32
20
30
40
50
60
70
80
90
100
110
120
ID - Amperes
40
50
60
70
80
90
100
t f
td(off) - - - -
RG = 2Ω, VGS = 15V
VDS = 125V
TJ = 25ºC
TJ = 125ºC
TJ = 125ºC
TJ = 25ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
20
22
24
26
28
30
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
RG = 2Ω, VGS = 15V
VDS = 125V
I D = 110A
I D = 55A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
10
30
50
70
90
110
23456
789
10
RG - Ohms
40
80
120
160
200
240
t f
td(off) - - - -
TJ = 125ºC, VGS = 15V
VDS = 125V
I D = 55A, 110A
IXYS REF: T_110N25T(8W)5-14-12-B
IXTH110N25T
IXTV110N25TS


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