IXTQ10P50P datasheet(5/6 Pages) IXYS

Part #	IXTQ10P50P

Description	PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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IXTA10P50P IXTQ10P50P

IXTP10P50P IXTH10P50P

Fig. 7. Input Admittance

-16

-14

-12

-10

-8

-6

-4

-2

0

-6.5

-6.0

-5.5

-5.0

-4.5

-4.0

-3.5

VGS - Volts

TJ = 125ºC

25ºC

- 40ºC

Fig. 8. Transconductance

0

4

8

12

16

20

24

-18

-16

-14

-12

-10

-8

-6

-4

-2

0

ID - Amperes

TJ = - 40ºC

25ºC

125ºC

Fig. 9. Forward Voltage Drop of Intrinsic Diode

-30

-25

-20

-15

-10

-5

0

-3.5

-3

-2.5

-2

-1.5

-1

-0.5

VSD - Volts

TJ = 125ºC

TJ = 25ºC

Fig. 10. Gate Charge

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

0

5

10

15

20

25

30

35

40

45

50

QG - NanoCoulombs

VDS = - 250V

I D = - 5A

I G = -1mA

Fig. 11. Capacitance

10

100

1,000

10,000

-40

-35

-30

-25

-20

-15

-10

-5

0

VDS - Volts

f = 1 MHz

Ciss

Crss

Coss

Fig. 12. Forward-Bias Safe Operating Area

0.1

1

10

100

10

100

1000

VDS - Volts

TJ = 150ºC

TC = 25ºC

Single Pulse

25µs

1ms

100µs

RDS(on) Limit

10ms

DC

-

--

-

100ms

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