IXTP32P05T datasheet(5/6 Pages) IXYS

Part #	IXTP32P05T

Description	TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated

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Manufacturer	IXYS [IXYS Corporation]

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IXTY32P05T IXTA32P05T

IXTP32P05T

Fig. 14. Resistive Turn-on Rise Time

vs. Drain Current

23

24

25

26

27

28

29

-32

-30

-28

-26

-24

-22

-20

-18

-16

ID - Amperes

RG = 10Ω , VGS = -10V

VDS = - 30V

TJ = 25ºC

TJ = 125ºC

Fig. 15. Resistive Turn-on Switching Times

vs. Gate Resistance

0

10

20

30

40

50

60

70

80

90

10

12

14

16

18

20

22

24

26

28

30

32

34

RG - Ohms

18

20

22

24

26

28

30

32

34

36

t r

td(on) - - - -

TJ = 125ºC, VGS = -10V

VDS = - 30V

I D = -16A, - 32A

Fig. 16. Resistive Turn-off Switching Times

vs. Junction Temperature

23.5

24.0

24.5

25.0

25.5

26.0

26.5

27.0

27.5

28.0

25

35

45

55

65

75

85

95

105

115

125

TJ - Degrees Centigrade

16

20

24

28

32

36

40

44

48

52

t f

td(off) - - - -

RG = 10Ω, VGS = -10V

VDS = - 30V

I D = -16A

I D = -16A, - 32A

Fig. 17. Resistive Turn-off Switching Times

vs. Drain Current

15

20

25

30

35

40

45

50

-32

-30

-28

-26

-24

-22

-20

-18

-16

ID - Amperes

24.0

24.5

25.0

25.5

26.0

26.5

27.0

27.5

t f

td(off) - - - -

RG = 10Ω, VGS = -10V

VDS = - 30V

TJ = 25ºC, 125ºC

Fig. 13. Resistive Turn-on Rise Time

vs. Junction Temperature

22

23

24

25

26

27

28

29

30

25

35

45

55

65

75

85

95

105

115

125

TJ - Degrees Centigrade

RG = 10Ω , VGS = -10V

VDS = - 30V

I D = -16A

I D = - 32A

Fig. 18. Resistive Turn-off Switching Times

vs. Gate Resistance

10

20

30

40

50

60

70

80

10

12

14

16

18

20

22

24

26

28

30

32

34

RG - Ohms

10

20

30

40

50

60

70

80

t f

td(off) - - - -

TJ = 125ºC, VGS = -10V

VDS = - 30V

I D = - 32A

I D = -16A

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