IXTA120P065T datasheet(1/6 Pages) IXYS

Part #	IXTA120P065T

Description	TrenchPTM Power MOSFETs P-Channel Enhancement Mode

Download	6 Pages

Scroll/Zoom	100%

Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

Logo

1 / 6 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

- 65

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

- 65

V

GSS

Continuous

±15

V

GSM

Transient

±25

V

I

D25

T

C = 25°C

- 120

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

- 360

A

I

A

T

C = 25°C

- 60

A

E

AS

T

C = 25°C1

J

P

D

T

C = 25°C

298

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062 in.) from Case for 10s

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

d

Mounting Torque (TO-220 & TO-247)

1.13/10

Nm/lb.in.

Weight

TO-263

2.5

g

TO-220

3.0

g

TO-247

6.0

g

DS100026B(01/13)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = - 250μA

- 65

V

GS(th)

V

DS = VGS, ID = - 250μA

- 2.0

- 4.0

V

I

GSS

V

GS = ± 15V, VDS = 0V

±100 nA

I

DSS

V

DS = VDSS, VGS = 0V

- 10

μA

T

J = 125°C

- 750

μA

R

DS(on)

V

GS = -10V, ID = 0.5 • ID25, Note 1

10 m

Ω

TrenchPTM

Power MOSFETs

P-Channel Enhancement Mode

Avalanche Rated

IXTA120P065T

IXTP120P065T

IXTH120P065T

V

DSS

= - 65V

I

D25

= - 120A

R

DS(on) ≤

≤≤≤≤

10m

Ω

Features

International Standard Packages

Avalanche Rated

Extended FBSOA

Fast Intrinsic Diode

Low R

DS(ON) and QG

Advantages

Easy to Mount

Space Savings

High Power Density

Applications

High-Side Switching

Push Pull Amplifiers

DC Choppers

Automatic Test Equipment

Current Regulators

Battery Charger Applications

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-247 (IXTH)

G

S

D

D (Tab)

TO-263 AA (IXTA)

G

S

D (Tab)

G

D S

TO-220AB (IXTP)

D (Tab)

Similar Part No. - IXTA120P065T

Manufacturer	Part #	Datasheet	Description
IXYS Corporation	IXTA120N04T2	261Kb / 6P	N-Channel Enhancement Mode Avalanche Rated
Inchange Semiconductor ...	IXTA120N04T2	299Kb / 2P	isc N-Channel MOSFET Transistor
IXYS Corporation	IXTA120N075T2	260Kb / 6P	N-Channel Enhancement Mode Avalanche Rated
Inchange Semiconductor ...	IXTA120N075T2	299Kb / 2P	isc N-Channel MOSFET Transistor

More results

Similar Description - IXTA120P065T

Manufacturer	Part #	Datasheet	Description
IXYS Corporation	IXTA96P085T	193Kb / 6P	TrenchPTM Power MOSFETs P-Channel Enhancement Mode
IXYS Corporation	IXTY32P05T	187Kb / 6P	TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated
Silicon Standard Corp.	SSM4953M	115Kb / 6P	P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Dongguan City Niuhang E...	NH2305A	3Mb / 9P	P-CHANNEL ENHANCEMENT-MODE MOSFETS
Guilin Strong Micro-Ele...	GMS2301	268Kb / 3P	P-Channel Enhancement-Mode MOSFETs
Silicon Standard Corp.	SSM4955GM	521Kb / 5P	Dual P-channel Enhancement-mode Power MOSFETs
Silicon Standard Corp.	SSM4957	234Kb / 5P	DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Dongguan City Niuhang E...	NH2301	3Mb / 8P	P-CHANNEL ENHANCEMENT-MODE MOSFETS
Dongguan City Niuhang E...	NH3401	2Mb / 3P	P-CHANNEL ENHANCEMENT-MODE MOSFETS
New Jersey Semi-Conduct...	IRFF9120	94Kb / 2P	P-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

More results

IXTA120P065T Datasheet(PDF) 1 Page - IXYS Corporation

IXTA120P065T Datasheet(HTML) 1 Page - IXYS Corporation

Similar Part No. - IXTA120P065T

Similar Description - IXTA120P065T

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL