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IXBK55N300 Datasheet(PDF) 3 Page - IXYS Corporation

Part # IXBK55N300
Description  High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXBK55N300 Datasheet(HTML) 3 Page - IXYS Corporation

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© 2011 IXYS CORPORATION, All Rights Reserved
IXBK55N300
IXBX55N300
Fig. 1. Output Characteristics @ TJ = 25ºC
0
20
40
60
80
100
120
0
0.5
1
1.5
2
2.5
3
3.5
4
VCE - Volts
VGE = 25V
20V
15V
10V
5V
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
0
50
100
150
200
250
300
01
2
3
45
67
8
VCE - Volts
VGE = 25V
20V
15V
10V
5V
Fig. 3. Output Characteristics @ TJ = 125ºC
0
20
40
60
80
100
120
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
VCE - Volts
VGE = 25V
20V
15V
10V
5V
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
VGE = 15V
I C = 110A
I C = 55A
I C = 27.5A
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
5
6
7
8
9
10
11
12
13
14
15
VGE - Volts
I C = 110A
TJ = 25ºC
27.5A
55A
Fig. 6. Input Admittance
0
20
40
60
80
100
120
140
160
180
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
VGE - Volts
TJ = 125ºC
25ºC
- 40ºC


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