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DSA50C100QB Datasheet(PDF) 4 Page - IXYS Corporation |
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DSA50C100QB Datasheet(HTML) 4 Page - IXYS Corporation |
4 / 4 page DSA 50 C 100 QB 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 10 20 30 40 50 60 70 020 40 60 80 100 0.0001 0.001 0.01 0.1 1 10 10 30 50 70 0 204060 0 10 20 30 40 50 60 70 0.0001 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 0 50 100 150 200 0 10 20 30 40 50 60 70 80 0 2040 6080 100 0 200 400 600 800 1000 DC 25°C 50°C 75°C 100°C 125°C Single Pulse T VJ=175°C 150°C I F [A] V F [V] I R [mA] V R [V] V R [V] C T [pF] T C [°C] I F(AV) [A] P (AV) [W] t [s] Note: All curves are per diode Fig. 1 Maximum forward voltage drop characteristics Fig. 2 Typ. reverse current I R vs. reverse voltage VR Fig. 3 Typ. junction capacitance C T vs. reverse voltage VR Fig. 4 Average forward current I F(AV) vs. case temperature TC Fig. 5 Forward power loss characteristics Fig. 6 Transient thermal impedance junction to case I F(AV) [A] T VJ = 150°C 125°C 25°C d= 0.5 d = DC 0.5 0.33 0.25 0.17 0.08 Z thJC [K/W] T VJ =25°C R thi [K/W] 0.026 0.172 0.227 0.435 0.09 t i [s] 0.0005 0.011 0.072 0.34 1.5 IXYS reserves the right to change limits, conditions and dimensions. 20101129a Data according to IEC 60747and per diode unless otherwise specified © 2010 IXYS all rights reserved |
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