VUM24-05N datasheet(3/4 Pages) IXYS

Part #	VUM24-05N

Description	Power MOSFET Stage for Boost Converters Module for Power Factor Correction

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Manufacturer	IXYS [IXYS Corporation]

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VUM 24-05N

IXYS reserves the right to change limits, test conditions and dimensions

23

45

6

7

0

10

20

30

40

50

60

70

80

-50

0

50

100

150

0.0

0.5

1.0

1.5

2.0

2.5

s

g

fs

0

2040

6080

100

0

20

40

60

80

0.51.0

1.52.0

2.5

0

20

40

60

80

100

120

10

100

1000

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0

5

10

15

20

0.1

1

10

100

0

100

200

300

400

0

2

4

6

8

10

12

-50

0

50

100

150

0.4

0.6

0.8

1.0

1.2

1.4

A/

μs

V

DS

V

C

nF

nC

°C

BV

DSS

T

VJ

norm.

°C

V

GS

Q

g

V

norm.

V

GS(th)

T

VJ

R

DS(on)

02

46

8

10

0

10

20

30

40

50

60

70

80

I

D

V

DS

V

A

V

GS

I

D

V

A

V

F

A

T

VJ = 25°C

T

VJ = 125°C

-di

F/dt

V

μC

V

GS= 5 V

6 V

10 V

7 V

I

D=18A

V

DSS

V

GS(th)

V

DS= 250 V

I

D = 18 A

I

G = 10 mA

C

iss

C

oss

C

rss

Q

rr

T

VJ=150°C

T

VJ=100°C

T

VJ= 25°C

I

F = 37 A

I

F = 74 A

I

F = 37 A

I

F = 18.5 A

I

F

A

I

D

typ.

max.

T

V

J=100°C

V

R= 350 V

Fig. 3 Typ. output characteristic

Fig. 4 Typ. transfer characteristics

Fig. 5 Typ. normalized

I

D = f (VDS) (MOSFET)

I

D = f (VGS) (MOSFET)

R

DS(on) = f (TVJ) (MOSFET)

Fig. 6 Typ. normalized BV

DSS = f (TVJ)

Fig. 7 Typ. turn-on gate charge

Fig. 8 Typ. capacitances C = f (V

DS),

V

GS(th) = f (TVJ) (MOSFET)

characteristics, V

GS = f (Qg) (MOSFET)

f = 1 MHz (MOSFET)

Fig. 9 Typ. transconductance,

Fig. 10 Forward current versus

Fig. 11 Recovery charge versus -di

F/dt

g

fs = f (ID) (MOSFET)

voltage drop (Boost Diode)

(Boost Diode)

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