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FM2G400US60 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FM2G400US60 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page ©2001 Fairchild Semiconductor Corporation FM2G400US60 Rev. A IGBT September 2001 Absolute Maximum Ratings T C = 25°C unless otherwise noted Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Symbol Description FM2G400US60 Units VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage ± 20 V IC Collector Current @ TC = 25°C 400 A ICM (1) Pulsed Collector Current 800 A IF Diode Continuous Forward Current @ TC = 25°C 400 A IFM Diode Maximum Forward Current 800 A TSC Short Circuit Withstand Time @ TC = 100°C10 us PD Maximum Power Dissipation @ TC = 25°C 1560 W TJ Operating Junction Temperature -40 to +150 °C Tstg Storage Temperature Range -40 to +125 °C Viso Isolation Voltage @ AC 1minute 2500 V Mounting Torque Power Terminals Screw : M6 2.5 N.m Mounting Screw : M6 2.5 N.m FM2G400US60 Molding Type Module General Description Fairchild Insulated Gate Bipolar Transistor (IGBT) Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control, Uninterruped Power Supply (UPS) and general inverters where short-circuit ruggedness is a required feature. Features • UL Certified No.E209204 • Short Circuit rated 10us @ TC = 100°C, VGE = 15V • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 400A • High Input Impedance • Fast & Soft Anti-Parallel FWD Application • AC & DC Motor Controls • General Purpose Inverters • Robotics • Servo Controls •UPS Internal Circuit Diagram C1 E2 G1 E1 G2 E2 E1/C2 Package Code : 7PM-EA |
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