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STFI10N65K3 Datasheet(PDF) 4 Page - STMicroelectronics |
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STFI10N65K3 Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 17 page Electrical characteristics STF10N65K3, STFI10N65K3, STP10N65K3 4/17 Doc ID 15732 Rev 3 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 650 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 650 V VDS = 650 V, TC=125 °C 1 50 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 4.5 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 3.6 A 0.75 1 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 - 1180 125 14 - pF pF pF Coss eq. Equivalent output capacitance VDS = 0 to 520 V, VGS = 0 - 77 - pF RG Intrinsic gate resistnce f=1 MHz open drain - 3 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 7.2 A, VGS = 10 V (see Figure 18) - 42 7.4 23 - nC nC nC |
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