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2012.01 - Rev.G

2SB1260

(1) Base

(2) Collector

(3) Emitter

ROHM : MPT3

EIAJ : SC-62

(3)

(2)

(1)

3.0

1.5

1.5

0.4

0.5

0.4

0.4

1.5

±

4.5

1.6

(1) Base

(2) Collector

(3) Emitter

ROHM : CPT3

EIAJ : SC-63

2SB1181

2.3

2.3

0.65

0.9

0.75

1.0

0.55

2.3

0.5

6.5

5.1

C0.5

(3)

(2)

(1)

Power Transistor (

−80V, −1A)

2SB1260 / 2SB1181

Features

Dimensions (Unit : mm)

1) Hight breakdown voltage and high current.

4) Complements the 2SD1898 / 2SD1733.

Structure

Epitaxial planar type

PNP silicon transistor

Absolute maximum ratings (Ta=25

°C)

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

Parameter

Tj

Tstg

−80

V

V

V

A (DC)

W

°C

°C

−80

−5

−1

A (Pulse)

0.5

2

∗2

1

10

2SB1260

2SB1181

2SB1181

150

−55 to +150

Symbol

Limits

Unit

W (Tc=25

°C)

Electrical characteristics (Ta=25

°C)

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector-emitter saturation voltage

Transition frequency

Output capacitance

Parameter

Symbol

Cob

Min.

−80

−80

−5

−

−

120

2SB1181

2SB1181

2SB1260

−

−

−

−

−

−

−

−

−

−

100

25

−

−

−

−1

−1

390

−0.4

−

−

= −50

μA

= −1mA

= −50

μA

= −60V

= −4V

= −500mA/ −50mA

= −10V

=0A

f

=1MHz

V

V

μA

μA

−

V

MHz

pF

−

20

−

pF

Typ.

Max.

Unit

Conditions