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FMG1G50US60H Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FMG1G50US60H Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 9 page  ©2002 Fairchild Semiconductor Corporation FMG1G50US60H Rev. A Electrical Characteristics of IGBT T C = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V ∆B VCES/ ∆T J Temperature Coeff. of Breakdown Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/ °C ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA On Characteristics VGE(th) G-E Threshold Voltage VGE = 0V, IC = 50mA 5.0 6.0 8.5 V VCE(sat) Collector to Emitter Saturation Voltage IC = 50A, VGE = 15V -- 2.2 2.8 V Dynamic Characteristics Cies Input Capacitance VCE = 30V, VGE = 0V, f = 1MHz -- 3460 -- pF Coes Output Capacitance -- 480 -- pF Cres Reverse Transfer Capacitance -- 140 -- pF Switching Characteristics td(on) Turn-On Delay Time VCC = 300 V, IC = 50A, RG = 5.9Ω, VGE = 15V Inductive Load, TC = 25°C -- 20 -- ns tr Rise Time -- 30 -- ns td(off) Turn-Off Delay Time -- 60 -- ns tf Fall Time -- 110 200 ns Eon Turn-On Switching Loss -- 1.1 -- mJ Eoff Turn-Off Switching Loss -- 1.2 -- mJ Ets Total Switching Loss -- 2.3 -- mJ td(on) Turn-On Delay Time VCC = 300 V, IC = 50A, RG = 5.9Ω, VGE = 15V Inductive Load, TC = 125°C -- 20 -- ns tr Rise Time -- 30 -- ns td(off) Turn-Off Delay Time -- 70 -- ns tf Fall Time -- 250 -- ns Eon Turn-On Switching Loss -- 1.2 -- mJ Eoff Turn-Off Switching Loss -- 2.4 -- mJ Ets Total Switching Loss -- 3.6 -- mJ Tsc Short Circuit Withstand Time VCC = 300 V, VGE = 15V @ TC = 100°C 10 -- -- us Qg Total Gate Charge VCE = 300 V, IC = 50A, VGE = 15V -- 145 210 nC Qge Gate-Emitter Charge -- 28 40 nC Qgc Gate-Collector Charge -- 65 95 nC |
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