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SI7431DP-T1-GE3 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI7431DP-T1-GE3 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 8 page Document Number: 73116 S10-2246-Rev. E, 04-Oct-10 www.vishay.com 3 Vishay Siliconix Si7431DP TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 10203040 50 VGS = 6 V ID - Drain Current (A) VGS = 10 V 0 2 4 6 8 10 0 153045 607590 VDS = 10 V ID = 3.8 A Qg - Total Gate Charge (nC) 1.0 1.2 0.1 10 40 0 0.2 0.4 0.6 0.8 TJ = 25 °C TJ = 150 °C VDS - Source-to-Drain Voltage (V) 1 Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 1000 2000 3000 4000 5000 6000 0 30 60 90 120 150 Ciss VDS - Drain-to-Source Voltage (V) Coss Crss 0.4 0.7 1.0 1.3 1.6 1.9 2.2 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 3.8 A TJ - Junction Temperature (°C) 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 2468 10 ID = 3.8 A VGS - Gate-to-Source Voltage (V) |
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