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IPA65R190C6 Datasheet(PDF) 2 Page - Infineon Technologies AG

Part # IPA65R190C6
Description  Extremely low losses due to very low FOM Rdson*Qg and Eoss
Download  19 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPA65R190C6 Datasheet(HTML) 2 Page - Infineon Technologies AG

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background image
drain
pin 2
gate
pin 1
source
pin 3
650V CoolMOS™ C6 Power Transistor
IPA65R190C6, IPB65R190C6
IPI65R190C6, IPP65R190C6
IPW65R190C6
Final Data Sheet
2
Rev. 2.0, 2011-05-09
1
Description
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle
and pioneered by Infineon Technologies. CoolMOS™ C6 series
combines the experience of the leading SJ MOSFET supplier with
high class innovation. The offered devices provide all benefits of a
fast switching SJ MOSFET while not sacrificing ease of use.
Extremely low switching and conduction losses make switching
applications even more efficient, more compact, lighter, and cooler.
Features
Extremely low losses due to very low FOM Rdson*Qg and Eoss
Very high commutation ruggedness
Easy to use/drive
JEDEC
1) qualified, Pb-free plating, Halogen free
Applications
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
Please note: For MOSFET paralleling the use of ferrite beads on
the gate or separate totem poles is generally recommended.
1) J-STD20 and JESD22
Table 1
Key Performance Parameters
Parameter
Value
Unit
V
DS @ Tj,max
700
V
R
DS(on),max
0.19
Q
g,typ
73
nC
I
D,pulse
66
A
E
oss @ 400V
5.9
µJ
Body diode d
i/dt
500
A/µs
Type / Ordering Code
Package
Marking
Related Links
IPW65R190C6
PG-TO247
IFX CoolMOS Webpage
IPB65R190C6
PG-TO263
IFX Design tools
IPI65R190C6
PG-TO262
65C6190
IPP65R190C6
PG-TO220
IPA65R190C6
PG-TO220 FullPAK


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