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RC28F640P33TF60A Datasheet(PDF) 5 Page - Micron Technology

Part # RC28F640P33TF60A
Description  Numonyx짰 P33-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell (SBC)
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Manufacturer  MICRON [Micron Technology]
Direct Link  http://www.micron.com
Logo MICRON - Micron Technology

RC28F640P33TF60A Datasheet(HTML) 5 Page - Micron Technology

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Datasheet
Jul 2011
5
Order Number:208034-04
P33-65nm SBC
1.0
Functional Description
1.1
Introduction
This document provides information about the Numonyx® P33-65nm Single
Bit per Cell (SBC) Flash Memory and describes its features, operations, and
specifications.
P33-65nm SBC device is offered in 64-Mbit and 128-Mbit densities. Benefits include
high-speed interface NOR device, and support for code and data storage. Features
include high-performance synchronous-burst read mode, a dramatical improvement in
buffer program time through larger buffer size, fast asynchronous access times, low
power, flexible security options, and two industry-standard package choices.
P33-65nm SBC device is manufactured using 65nm process technology.
1.2
Overview
This family of devices provides high performance at low voltage on a 16-bit data bus.
Individually erasable memory blocks are sized for optimum code and data storage.
Upon initial power-up or return from reset, the device defaults to asynchronous page-
mode read. Configuring the RCR enables synchronous burst-mode reads. In
synchronous burst mode, output data is synchronized with a user-supplied clock signal.
A WAIT signal provides an easy CPU-to-flash memory synchronization.
In addition to the enhanced architecture and interface, the device incorporates
technology that enables fast factory program and erase operations. The device features
a 256-word buffer to enable optimum programming performance, which can improve
system programming throughput time significantly to 1.8MByte/s.
The P33-65nm SBC device supports read operations with VCC at 3.0V, and erase and
program operations with VPP at 3.0V or 9.0V. Buffered Enhanced Factory Programming
provides the fastest flash array programming performance with VPP at 9.0V, which
increases factory throughput. With VPP at 3.0V, VCC and VPP can be tied together for a
simple, ultra low power design. In addition to voltage flexibility, a dedicated VPP
connection provides complete data protection when VPP ≤ VPPLK.
The Command User Interface is the interface between the system processor and all
internal operations of the device. An internal Write State Machine automatically
executes the algorithms and timings necessary for block erase and program. A Status
Register indicates erase or program completion and any errors that may have occurred.
An industry-standard command sequence invokes program and erase automation. Each
erase operation erases one block. The Erase Suspend feature allows system software to
pause an erase cycle to read or program data in another block. Program Suspend
allows system software to pause programming to read other locations. Data is
programmed in word increments (16 bits).
The one-time-programmable (OTP) Register allows unique flash device identification
that can be used to increase system security. The individual Block Lock feature provides
zero-latency block locking and unlocking. The P33-65nm SBC device adds enhanced
protection via Password Access Mode which allows user to protect write and/or read
access to the defined blocks. In addition, the P33-65nm SBC device could also provide
the full-device OTP permanent lock feature.


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