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CY7C1338G Datasheet(PDF) 9 Page - Cypress Semiconductor |
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CY7C1338G Datasheet(HTML) 9 Page - Cypress Semiconductor |
9 / 22 page CY7C1338G Document Number: 38-05521 Rev. *J Page 9 of 22 Maximum Ratings Exceeding maximum ratings may shorten the useful life of the device. User guidelines are not tested. Storage temperature ................................ –65 °C to +150 °C Ambient temperature with power applied .......................................... –55 °C to +125 °C Supply voltage on VDD relative to GND .......–0.5 V to +4.6 V Supply voltage on VDDQ relative to GND ...... –0.5 V to +VDD DC voltage applied to outputs in tri-state ..........................................–0.5 V to VDDQ + 0.5 V DC input voltage ................................. –0.5 V to VDD + 0.5 V Current into outputs (LOW) ........................................ 20 mA Static discharge voltage (per MIL-STD-883, method 3015) ......................... > 2001 V Latch-up current ................................................... > 200 mA Operating Range Range Ambient Temperature VDD VDDQ Commercial 0 °C to +70 °C 3.3 V 5% / + 10% 2.5 V – 5% to VDD Electrical Characteristics Over the Operating Range Parameter [10, 11] Description Test Conditions Min Max Unit VDD Power supply voltage 3.135 3.6 V VDDQ I/O supply voltage 2.375 VDD V VOH Output HIGH voltage for 3.3 V I/O, IOH = –4.0 mA 2.4 – V for 2.5 V I/O, IOH = –1.0 mA 2.0 – V VOL Output LOW voltage for 3.3 V I/O, IOL = 8.0 mA – 0.4 V for 2.5 V I/O, IOL = 1.0 mA – 0.4 V VIH Input HIGH voltage for 3.3 V I/O 2.0 VDD + 0.3 V for 2.5 V I/O 1.7 VDD + 0.3 V VIL Input LOW voltage [10] for 3.3 V I/O –0.3 0.8 V for 2.5 V I/O –0.3 0.7 V IX Input leakage current except ZZ and MODE GND VI VDDQ –5 5 µA Input current of MODE Input = VSS –30 – µA Input = VDD –5 µA Input current of ZZ Input = VSS –5 – µA Input = VDD –30 µA IOZ Output leakage current GND VI VDDQ, output disabled –5 5 µA IDD VDD operating supply current VDD = Max, IOUT = 0 mA, f = fMAX= 1/tCYC 10-ns cycle, 100 MHz –205 mA ISB1 Automatic CE power-down current – TTL inputs Max VDD, device deselected, VIN VIH or VIN VIL, f = fMAX, inputs switching 10-ns cycle, 100 MHz –80 mA ISB2 Automatic CE power-down current – CMOS inputs Max VDD, device deselected, VIN VDD – 0.3 V or VIN 0.3 V, f = 0, inputs static 10-ns cycle, 100 MHz –40 mA ISB3 Automatic CE power-down current – CMOS inputs Max VDD, device deselected, VIN VDDQ – 0.3 V or VIN 0.3 V, f = fMAX, inputs switching 10-ns cycle, 100 MHz –65 mA ISB4 Automatic CE power-down current – TTL inputs Max VDD, device deselected, VIN VDD – 0.3 V or VIN 0.3 V, f = 0, inputs static 10-ns cycle, 100 MHz –45 mA Notes 10. Overshoot: VIH(AC) < VDD + 1.5 V (pulse width less than tCYC/2), undershoot: VIL(AC) > –2 V (Pulse width less than tCYC/2). 11. TPower-up: Assumes a linear ramp from 0 V to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ VDD. |
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Similar Description - CY7C1338G_13 |
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