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CY7C1480V33 Datasheet(PDF) 7 Page - Cypress Semiconductor

Part # CY7C1480V33
Description  72-Mbit (2 M x 36) Pipelined Sync SRAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1480V33 Datasheet(HTML) 7 Page - Cypress Semiconductor

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CY7C1480V33
Document Number: 38-05283 Rev. *N
Page 7 of 25
Single Write Accesses Initiated by ADSC
ADSC Write accesses are initiated when the following conditions
are satisfied: (1) ADSC is asserted LOW, (2) ADSP is deasserted
HIGH, (3) CE1, CE2, CE3 are all asserted active, and (4) the
appropriate combination of the Write inputs (GW, BWE, and
BWX) are asserted active to conduct a Write to the desired
byte(s). ADSC-triggered Write accesses require a single clock
cycle to complete. The address presented to A is loaded into the
address register and the address advancement logic while being
delivered to the memory array. The ADV input is ignored during
this cycle. If a global Write is conducted, the data presented to
the DQs is written into the corresponding address location in the
memory core. If a Byte Write is conducted, only the selected
bytes are written. Bytes not selected during a Byte Write
operation will remain unaltered. A synchronous self-timed Write
mechanism has been provided to simplify the Write operations.
Because CY7C1480V33 is a common I/O device, the Output
Enable (OE) must be deasserted HIGH before presenting data
to the DQs inputs. Doing so will tri-state the output drivers. As a
safety precaution, DQs are automatically tri-stated whenever a
Write cycle is detected, regardless of the state of OE.
Burst Sequences
The CY7C1480V33 provides a two-bit wraparound counter, fed
by A1:A0, that implements either an interleaved or linear burst
sequence. The interleaved burst sequence is designed
specifically to support Intel Pentium applications. The linear
burst sequence is designed to support processors that follow a
linear burst sequence. The burst sequence is user selectable
through the MODE input.
Asserting ADV LOW at clock rise will automatically increment the
burst counter to the next address in the burst sequence. Both
Read and Write burst operations are supported.
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ places
the SRAM in a power conservation “sleep” mode. Two clock
cycles are required to enter into or exit from this “sleep” mode.
While in this mode, data integrity is guaranteed. Accesses
pending when entering the “sleep” mode are not considered valid
nor is the completion of the operation guaranteed. The device
must be deselected before entering the “sleep” mode. CE1, CE2,
CE3, ADSP, and ADSC must remain inactive for the duration of
tZZREC after the ZZ input returns LOW.
Interleaved Burst Address Table
(MODE = Floating or VDD)
First
Address
A1:A0
Second
Address
A1:A0
Third
Address
A1:A0
Fourth
Address
A1:A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
Linear Burst Address Table
(MODE = GND)
First
Address
A1:A0
Second
Address
A1:A0
Third
Address
A1:A0
Fourth
Address
A1:A0
00
01
10
11
01
10
11
00
10
11
00
01
11
00
01
10
ZZ Mode Electrical Characteristics
Parameter
Description
Test Conditions
Min
Max
Unit
IDDZZ
Sleep mode standby current
ZZ > VDD– 0.2 V
120
mA
tZZS
Device operation to ZZ
ZZ > VDD – 0.2 V
2tCYC
ns
tZZREC
ZZ recovery time
ZZ < 0.2 V
2tCYC
–ns
tZZI
ZZ Active to Sleep current
This parameter is sampled
2tCYC
ns
tRZZI
ZZ Inactive to exit Sleep current This parameter is sampled
0
ns


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