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CY62128ELL-45SXA Datasheet(PDF) 9 Page - Cypress Semiconductor

Part # CY62128ELL-45SXA
Description  1-Mbit (128 K x 8) Static RAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY62128ELL-45SXA Datasheet(HTML) 9 Page - Cypress Semiconductor

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CY62128E MoBL®
Document Number: 38-05485 Rev. *K
Page 9 of 19
Switching Waveforms
Figure 6. Read Cycle 1 (Address Transition Controlled) [20, 21]
Figure 7. Read Cycle No. 2 (OE Controlled) [21, 22, 23]
Figure 8. Write Cycle No. 1 (WE Controlled) [23, 24, 25, 26]
PREVIOUS DATA VALID
DATA VALID
RC
tAA
tOHA
tRC
ADDRESS
DATA OUT
50%
50%
DATA VALID
tRC
tACE
tDOE
tLZOE
tLZCE
tPU
HIGH IMPEDANCE
tHZOE
tHZCE
tPD
IMPEDANCE
ICC
ISB
HIGH
ADDRESS
CE
DATA OUT
VCC
SUPPLY
CURRENT
OE
DATA VALID
tHD
tSD
tPWE
tSA
tHA
tAW
tSCE
tWC
tHZOE
ADDRESS
CE
WE
DATA I/O
OE
NOTE 27
Notes
20. The device is continuously selected. OE, CE1 = VIL, CE2 = VIH.
21. WE is HIGH for read cycle.
22. Address valid before or similar to CE1 transition LOW and CE2 transition HIGH.
23. CE is the logical combination of CE1 and CE2. When CE1 is LOW and CE2 is HIGH, CE is LOW; when CE1 is HIGH or CE2 is LOW, CE is HIGH.
24. The internal Write time of the memory is defined by the overlap of WE, CE = VIL. All signals must be ACTIVE to initiate a write and any of these signals can
terminate a write by going INACTIVE. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write.
25. Data I/O is high impedance if OE = VIH.
26. If CE1 goes HIGH or CE2 goes LOW simultaneously with WE HIGH, the output remains in high impedance state.
27. During this period, the I/Os are in output state and input signals must not be applied.


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