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LM5100ASD Datasheet(PDF) 3 Page - Texas Instruments |
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LM5100ASD Datasheet(HTML) 3 Page - Texas Instruments |
3 / 28 page LM5100A, LM5100B, LM5100C, LM5101A, LM5101B, LM5101C www.ti.com SNOSAW2P – SEPTEMBER 2006 – REVISED MARCH 2013 PIN DESCRIPTIONS(1) (continued) Pin # SO MSOP- Name Description Application Information WSON- WSON- SOIC-8 Power PowerPad 8(1) 10(1) Pad-8 -8(1) High-side MOSFET Connect to the bootstrap capacitor negative terminal 4 4 4 4 4 HS source and the source of the high-side MOSFET. connection The LM5100A/B/C inputs have CMOS type High-side driver thresholds. The LM5101A/B/C inputs have TTL type 5 5 5 7 5 HI control input thresholds. Unused inputs should be tied to ground and not left open. The LM5100A/B/C inputs have CMOS type Low-side driver thresholds. The LM5101A/B/C inputs have TTL type 6 6 6 8 6 LI control input thresholds. Unused inputs should be tied to ground and not left open. 7 7 7 9 7 VSS Ground return All signals are referenced to this ground. Low-side gate Connect to the gate of the low-side MOSFET with a 8 8 8 10 8 LO driver output short, low inductance path. EP (WSON and SO Solder to the ground plane under the IC to aid in heat EP EP EP EP PowerPad and MSOP- dissipation. PowerPad packages) These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) (2) VDD to VSS −0.3V to +18V HB to HS −0.3V to +18V LI or HI Input −0.3V to VDD +0.3V LO Output −0.3V to VDD +0.3V HO Output VHS −0.3V to VHB +0.3V HS to VSS (3) −5V to +100V HB to VSS 118V Junction Temperature +150°C Storage Temperature Range −55°C to +150°C ESD Rating HBM (4) 2 kV (1) Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation of the device is specified. Operating Ratings do not imply performance limits. For performance limits and associated test conditions, see the Electrical Characteristics Electrical Characteristics tables. (2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications. (3) In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS node will generally not exceed -1V. However, in some applications, board resistance and inductance may result in the HS node exceeding this stated voltage transiently. If negative transients occur, the HS voltage must never be more negative than VDD-15V. For example if VDD = 10V, the negative transients at HS must not exceed -5V. (4) The Human Body Model (HBM) is a 100 pF capacitor discharged through a 1.5k Ω resistor into each pin. 2 kV for all pins except Pin 2, Pin 3 and Pin 4 which are rated at 1000V for HBM. Machine Model (MM) ratings are : 100V(MM) for Options B and C; 50V(MM) for Option A. Recommended Operating Conditions VDD +9V to +14V HS −1V to 100V HB VHS +8V to VHS +14V HS Slew Rate < 50 V/ns Junction Temperature −40°C to +125°C Copyright © 2006–2013, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: LM5100A LM5100B LM5100C LM5101A LM5101B LM5101C |
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